Hi-Per NVSRAM Modules range in density from 16Kbits to 2Mbytes with access times of 70 to 120ns, data widths from x 8- x 16. Hi-Per NVSRAM Module uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-volatility without long write-cycle times and write-cycle limitations associated with EEPROM.
| Organization | Part Number |
|---|---|
| 16Kbit(2Kx8bit) | HTNV2K8D(28pin) |
| 64Kbit(8Kx8bit) | HTNV8K8D(28pin) |
| 256Kbit(32Kx8bit) | HTNV32K8D(28pin) |
| 1Mbit(128Kx8bit) | HTNV128K8D(32pin) |
| 2Mbit(256Kx8bit) | HTNV256K8D(32pin) |
| 4Mbit(512Kx8bit) | HTNV512K8D(32pin) |
| 256Kbyte(128Kx16bit) | HTNV128K16D(32pin) |
| 1Mbyte(1Mx8bit) | HTNV2M8D(36pin) |
| 2Mbyte(2Mx8bit) | HTNV2M8D(36pin) |
Main Products
system development, network, multimedia, research & development